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D041 High Resolution X-ray Diffraction Studies of Epitaxially Grown GaN/SiC(0001) - Growth Conditions, Defect Density and Stress
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- Journal:
- Powder Diffraction / Volume 18 / Issue 2 / June 2003
- Published online by Cambridge University Press:
- 20 May 2016, p. 173
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Characterization of Thin GaN Layers Deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H- SiC Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T5.7.1
- Print publication:
- 2000
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Properties of Free-Standing GaN Bulk Crystals Grown by HVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 269
- Print publication:
- 1997
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GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 251
- Print publication:
- 1997
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Physical Properties of Bulk GaN Crystals Grown by HVPE
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e39
- Print publication:
- 1997
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- Article
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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 245
- Print publication:
- 1997
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